Re: Philips KT4 Matchline model V6820
EPROM, EAROM and EEPROM including Flash all use the same basic mechanism for storing data namely a floating gate MOSFET. Effectively, each storage cell has a capacitor and a FET that is switched on or off by the charge stored in the capacitor.
The above types of PROM vary in the way that the devices are erased, how the storage cells are addressed for reading / writing and erasing and the requirement for additional power supply rails.
Flash is the current state of the art of EEPROM technology and balances the conflicting requirements of write /erase cycle endurance and storage capacity by storing 1, 2 or 3 bits of data per cell. Multi-level cells store one of 4 or 8 different voltage levels per cell, are less reliable than single level cells and require sophisticated error correction and wear levelling algorithms to be usable.
John
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