Quote:
Originally Posted by G0HZU_JMR
The VNA tests do indicate a subtle lack of symmetry in the die, there seems to be less shunt capacitance at the drain part of the die compared to the source. I think the drain and source sit over the top of the gate so maybe there is a tiny bit less drain area compared to the source.
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This page from my Siliconix databook seems to confirm your hypothesis !
Andy