Quote:
Originally Posted by ricard
Then again modern flash memory types such as NAND flash do have fairly severe limits on the number of times they can be programmed, not to mention that the data in the bit cells decay over time to the point of being unreadable, unless measures are taken such as error correcting codes.
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This is in large part because most consumer NAND FLASH is of the multi-level cell (MLC) type where each memory cell effectively stores 2 bits of data by representing these as 4 distinct voltage levels. This system is therefore more "analogue" than single-level cell FLASH where each cell stores a single bit. As such, MLC is more prone to errors due to manufacturing variability, exposure to radiation, device aging etc but has the advantage of having twice the data capacity of SLC for a given number of memory cells and hence silicon die area.
John